Ridge waveguide lasers with vertically stacked quantum wells and tunnel junctions

نویسندگان

چکیده

Abstract We report on the fabrication and electro-optical performance of ridge waveguide (RW) lasers emitting near 905 nm based a vertical layer structure consisting three single quantum wells (SQWs) as active regions separated by two tunnel junctions (TJs). The core is designed in such way that third mode lasing. width varied between 3 µ m 200 m. Deep- shallow-etched ridges were fabricated. shallow etching stopped slightly above topmost SQW, whereas deep etch went through all TJs lowest SQW. For comparison, we also fabricated conventional RW similar having only one SQW no TJs. TJ with deep-etched provide highest output power, threshold current best slope efficiency 2.4 W A ?1 for 6 small widths but surpasses when increased. lateral far field angle about 2° larger compared to etched ones.

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ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2022

ISSN: ['0268-1242', '1361-6641']

DOI: https://doi.org/10.1088/1361-6641/ac860f